Suntan Aluminum Electrolytic Capacitors

Posted February 23,2021 * Comments(0)

Suntan Technology Company Limited
---All Kinds of Capacitors

Дорогие клиенты,

У нас есть большое количество и много видов алюминиевых электролитических конденсаторов. В частности, у нас очень хорошая поддержка для Snap-in и Radial. Пожалуйста, найдите ссылку ниже для получения дополнительной информации и не стесняйтесь отправлять список запросов на info@capacitors.hk или sales@capacitors.hk.

Санпин: https://www.suntan.com.hk/Aluminium-Electrolytic-Capacitors/Snap-in.html
Радиальный: https://www.suntan.com.hk/Aluminium-Electrolytic-Capacitors/Radial.html

Suntan Aluminum Electrolytic Capacitors

Su Suntan TSC3S510TIR Replace Murata Trimmer Capacitors Perfectly

Posted March 18,2019 * Comments(0)

Suntan Technology Company Limited
---All kinds of Capacitors

Como concorrente, o Suntan TSC3S510TIR pode substituir alguns dos capacitores do trimmer Murata. Caso codificado por cor marfim permite fácil identificação; construção selada impede a penetração de fluxo e poeira; Certificação RoHS aprovada. Ele foi projetado para posicionamento automático em aplicações de montagem em superfície.

O TSC3S510TIR é adequado para sistemas de áudio automotivos, CIs híbridos, sistemas de entrada remota sem chave, câmeras de vigilância, dispositivos anti-roubo, telefone de entrada. De acordo com o modelo diferente, os usuários podem alterar o tamanho do padrão de PCB para 3MM.

Capacitance   (pF MAX) Murata Suntan
Part Number L x W (size) Part Number L x W (size)
10pF TZV2Z100A110B00 2.3(W)x3.2(L)x1.45max.(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZV2Z100A110R00 2.3(W)x3.2(L)x1.45max.(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZY2Z100AC01B00 2.5(W)x3.2(L)x1.25max.(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZY2Z100AC01R00 2.5(W)x3.2(L)x1.25max.(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZY2Z100A001B00 2.5(W)x3.2(L)x1.25max.(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZY2Z100A001R00 2.5(W)x3.2(L)x1.25max.(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZC3R100A110R00(White) 3.2(W)x4.5(L)x1.6(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZC3R100A110B00(White) 3.2(W)x4.5(L)x1.6(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZC3R100AA01B00(Black) 3.2(W)x4.5(L)x1.6(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZC3R100AA01R00(Black) 3.2(W)x4.5(L)x1.6(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZB4Z100AA10B00 (White) 4.0(W)x4.5(L)x3.0(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZB4Z100AA10R00 (White) 4.0(W)x4.5(L)x3.0(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZB4Z100AA10R01 (White) 4.0(W)x4.5(L)x3.0(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZB4Z100AB10B00 (White) 4.0(W)x4.5(L)x3.0(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZB4Z100AB10R00 (White) 4.0(W)x4.5(L)x3.0(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZB4Z100AB10R01 (White) 4.0(W)x4.5(L)x3.0(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZS2Z100A001B00 2.2(W)x2.7(L)x0.95(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
10pF TZS2Z100A001R00 2.2(W)x2.7(L)x0.95(H)mm TSC3S510TIR (Ivory) 3.2(W) x 4.5(L) x 1.5(T)mm
Nota: as informações do produto neste catálogo é apenas para referência, por favor entre em contato com nossas vendas antes de encomendar: sales@suntan.com.hk

Suntan Tantalum Capacitors Microphonic Effects

Posted May 4,2011 * Comments(0)

Suntan Technology Company Limited
---All Kinds of Capacitors

Of much less concern, yet still important, especially in audio applications, is the micro phonic or piezoelectric effect. Barium titinate which is the base ceramic material for most dielectric systems will exhibit microphonic effects. It is not very difficult to take a Y5V capacitor and put a DC bias with a small signal 1kHz sine wave and get the capacitor to “sing”. Tantalum capacitors exhibit no microphonic effects. The experiment done by AVX involved the opposite phenomena whereby the part was shaken while under bias and the resulting generated voltage was measured. This was done for a series of 1µF devices and the results are shown in Fig below.

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